 Imveliso> > I-850NM ikhokelwa> Ubungakanani beChip Chip 850nm IR LED 3528 PLCC-2

Ubungakanani beChip Chip 850nm IR LED 3528 PLCC-2

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Qhagamshelana Ngoku

Uhlobo lokuhlawula: T/T,Paypal,Western Union
Incoterm: FOB,EXW,FCA
Min. Myalelo: 5000 Piece/Pieces
Zothutho: Ocean,Land,Air
Port: SHENZHEN

Amandla okubonelela kunye neNkcukacha ezongezelelweyo

Additional Information

Packaging: Ibhokisi ibhokisi

Imveliso: 1000000000 pcs/week

Zothutho: Ocean,Land,Air

Indawo yokuQala: China

Amandla okubonelela: 7000000000 pcs/week

Sekiso: GB/T19001-2008/ISO9001:2008

HS Code: 8541401000

Port: SHENZHEN

Uhlobo lokuhlawula: T/T,Paypal,Western Union

Incoterm: FOB,EXW,FCA

Iimpawu zeMveliso

Umzekelo No.: 3528IRC-85L14I80

Ibhanti: Eyona LED

Ukupakisha kunye nokuhanjiswa

Ukuthengisa iiyunithi:	Piece/Pieces
Uhlobo lwephakheji:	Ibhokisi ibhokisi
Ukukhuphela:

Inkampani yeVidiyo



I-2835 i-SMD ye-SMD ye-Comd Inkqubela phambili



Chwetheza nge-hole-hole njenge-reel strip

Ingcaciso yeMveliso

- I-3528 ye-SMD IR ye-LED -

Ifoto: 3528IRC-85L14I80

Ukufa okungabonakaliyo kwe-LED, okwahluke kakhulu kwi-chip ye-LED bubungakanani kunye nobude bebude. Ngokwesiqhelo, ubukhulu obukhulu, ubungakanani be-LED obungenasiphelo, okukhona kungaphathwa yi-LED kunye nokusebenza ngokugqibeleleyo. Kule 2835 850nm ye-LED, siyipakishe nge-16 mil ye-LED engenanto, ezona zixhobo zinkulu zokufa kuthotho lwe-850nm ye-LED. Oko kuthetha ukuba le LED ye-SMD inokubamba ngaphezulu kwe-100mA yangoku. Ngaba ufuna i-850nm ye-infrared LED ene-3528 PLCC2 LED? Nxibelelana nathi ngolwazi oluthe kratya malunga nalo!

2835 smd led

- Size: 3.5*2.8*1.9mm

- Chip Number: 1 chip

- Color: 850nm LED

- Type: Surface mount device

- Chip brand: customize

- Nick mark: Anode

- Different color are available

- Different wavelength are available

- Warranty: 5 Years

- RoHS, REACH, EN62471

- Uniform light output

- Long life-solid state reliability

- Low Power consumption

-Anti UV epoxy resin package

-High temperature resistance

- Dimension Iparameters -

3528 smd 850nm ir led

Ezi meko ze-SMD ze-LED zikwakhona kwi-IR LED, i-UV LED, iBlue SMD ye-LED, i-Red SMD ye-LED, i-Amber LED ect.

-Ukhupha umbala -

* Imibala kwifoto yathathwa yikhamera, nceda uthathe umbala okhupha owona mgangatho.

Iiparamitha zombane -

Parameter

Symbol

Rating

Power Dissipation

Pd

200mw

Pulse Forward Current

IFP

300mA

Forward Current

IF

100mA

Reverse Voltage

VR

5V

Junction Temperature

Tj

115°C

Operating Tempertature

Topr

-40 - +80°C

Storage Tempertature

Tstg

-40 - +100°C

Soldering Temperature

Tsol

260°C

Electro-Static-Discharge(HBM)

ESD

2000v

Warranty

Time

5Years

Antistatic bag

Piece

2000Bag

Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.

Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Parameter

Symbol

Min

Typ

Max

Unit

Test Condition

Radiant Intensity

Ee

7

8

mW/sr

IF=20mA

20

30

IF=50mA

38

50

IF=100mA

Lumiuous Power

Po

20

30

mW

IF=20mA

25

35

IF=100mA

Viewing Angle

2q1/2

120

deg

IF=100mA

Peak Wavelength

λp

840

850

nm

IF=100mA

Spectral Bandwidth

Dl

50

nm

IF=100mA

Forward Voltage

VF

1.3

1.5

1.6

V

IF=20mA

1.4

1.5

1.7

IF=50mA

Reverse Current

IR

5

uA

VR=5V

Luminous Intensity is measured by ZWL600.

2q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.

*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.

- Uqhagamshelo lwengcingo yeGolide-

* Ukuze ugcine lonke ixesha elide le-LED, ifektri ye-BestLED isebenzisa ucingo lwegolide olusulungekileyo kunxibelelwano lwangaphakathi lwesekethe

Ukupakisha -

* Siyipakisha ngokupakisha okuncomekayo emva kwetheyiphu njenge reel

- Isicelo -

-I-LED ye-IR edibeneyo-

-Umveliso -

- Sebenzisa -

SMD LED Use of attention

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Category: I-850NM ikhokelwa

 Imveliso> > I-850NM ikhokelwa> Ubungakanani beChip Chip 850nm IR LED 3528 PLCC-2

Parameter	Symbol	Rating
Power Dissipation	Pd	200mw
Pulse Forward Current	IFP	300mA
Forward Current	IF	100mA
Reverse Voltage	VR	5V
Junction Temperature	Tj	115°C
Operating Tempertature	Topr	-40 - +80°C
Storage Tempertature	Tstg	-40 - +100°C
Soldering Temperature	Tsol	260°C
Electro-Static-Discharge(HBM)	ESD	2000v
Warranty	Time	5Years
Antistatic bag	Piece	2000Bag
*Pulse Forward Current Condition:Duty 1% and Pulse Width=10us.
*Soldering Condition:Soldering condition must be completed with 3 seconds at 260°C

Parameter	Symbol	Min	Typ	Max	Unit	Test Condition
Radiant Intensity	Ee	7		8	mW/sr	IF=20mA
		20	30			IF=50mA
		38		50		IF=100mA
Lumiuous Power	Po	20		30	mW	IF=20mA
Lumiuous Power	Po	25		35	mW	IF=100mA
Viewing Angle	2q1/2		120		deg	IF=100mA
Peak Wavelength	λp	840	850		nm	IF=100mA
Spectral Bandwidth	Dl		50		nm	IF=100mA
Forward Voltage	VF	1.3	1.5	1.6	V	IF=20mA
Forward Voltage	VF	1.4	1.5	1.7	V	IF=50mA
Reverse Current	IR			5	uA	VR=5V
*Luminous Intensity is measured by ZWL600.
*2q1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.
*lD is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.